Nitrogen effects on generation and velocity of dislocations in Czochralski-grown silicon

Ichiro Yonenaga

研究成果: Article査読

27 被引用数 (Scopus)

抄録

The dynamic properties of individual dislocations in nitrogen (N)-doped Czochralski-grown Si crystals with concentrations up to 6× 1015 cm-3 were investigated at temperatures of 650-950 °C using the etch pit technique and compared with such characteristics of N-free Si crystals. The velocity of dislocations in motion in N-doped crystals was revealed to be unaffected by N doping. It was found that the generation of dislocations from a surface scratch was suppressed in N-doped Si and that the critical stress for dislocation generation increased with N concentration, which is interpreted as being due to dislocation immobilization caused by impurity segregation. N doping is concluded to be effective in the promotion of precipitation of oxygen impurity resulting in immobilization of dislocations.

本文言語English
論文番号023517
ジャーナルJournal of Applied Physics
98
2
DOI
出版ステータスPublished - 2005 7 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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