Nitrogen-doped GaAsP light-emitting diodes with junctions grown by hydride vapor-phase epitaxy

Tadashige Sato, Megumi Imai

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Nitrogen-doped GaAsP light-emitting diodes (LEDs) with grown junctions have been fabricated on GaP substrates using hydride vapor-phase epitaxy. A p +/p-layer structure was employed to reduce light absorption and to optimize the carrier concentration at the junction. The carrier concentration in the p layer of the structure plays the important role of improvement of the luminous intensity, and is optimized at 3×1017cm-3. The LEDs were 20% brighter than those commercially available with diffused junctions. Reliability studies showed good stability through 168 h of operation, enough to suggest they could be used as commercial products.

本文言語English
ページ(範囲)2875-2877
ページ数3
ジャーナルApplied Physics Letters
80
16
DOI
出版ステータスPublished - 2002 4 22
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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