Nitridation of Si(100) surface with NH 3

S. Ishidzuka, Y. Igari, T. Takaoka, I. Kusunoki

研究成果: Article査読

27 被引用数 (Scopus)

抄録

The nitridation of a Si(100) surface with a NH 3 beam at temperatures between 600 and 900°C was studied using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Thicker film was formed at higher temperature. The composition ratio of the film was almost constant during the film growth at all temperature. Island growth of silicon nitride was observed at 900°C using SEM. The N1s XPS spectrum of the Si surface nitrided was deconvoluted into two Gaussian components.

本文言語English
ページ(範囲)107-111
ページ数5
ジャーナルApplied Surface Science
130-132
DOI
出版ステータスPublished - 1998 6

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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