Ni silicidation on Heavily Doped Si Substrates

Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow, Hiroshi Iwai

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Ni silicide films were formed on both heavily doped n+ and p+ Si substrates at various temperatures ranged from 200°C to 950°C and its electrical and structural properties were studied. It was found that the phase transition temperature from NiSi phase to NiSi2 phase depend on substrate types; 900°C for NiSi film on n+ Si substrate and 750°C for NiSi film on p+ Si substrate, respectively. It was also found that agglomerations of Ni silicide films on n+ Si substrates begin to occur at the annealing temperatures around 600°C while there is no agglomeration observed in Ni silicide films on p+ Si substrates up to 700°C. Obtained results show that the agglomeration is especially important factor in the process temperature dependency of the sheet resistance of Ni silicides formed on n+ Si substrates. It was also demonstrated that the agglomeration can be suppressed by an inserted thin Boron layer at the interface of Ni/Si.

本文言語English
ホスト出版物のタイトルICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
ページ1304-1307
ページ数4
DOI
出版ステータスPublished - 2008
イベント2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
継続期間: 2008 10月 202008 10月 23

出版物シリーズ

名前International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
国/地域China
CityBeijing
Period08/10/2008/10/23

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 凝縮系物理学
  • 電子材料、光学材料、および磁性材料

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