New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics

T. Endoh, H. Iizuka, S. Aritome, R. Shirota, F. Masuoka

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation method is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation method, the leakage current can be suppressed, and then the read disturb life time after 105 cycles W/E operation is more than 10 times longer in comparison with the conventional method.

本文言語English
ホスト出版物のタイトル1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
出版社Institute of Electrical and Electronics Engineers Inc.
ページ603-606
ページ数4
ISBN(電子版)0780308174
DOI
出版ステータスPublished - 1992 1 1
外部発表はい
イベント1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
継続期間: 1992 12 131992 12 16

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
1992-December
ISSN(印刷版)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
国/地域United States
CitySan Francisco
Period92/12/1392/12/16

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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