New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics

Tetsuo Endoh, Hirohisa Iizuka, Riichirou Shirota, Fujio Masuoka

研究成果: Article査読

1 被引用数 (Scopus)

抄録

This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for Flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation methods is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation methods, the leakage current can be suppressed, and then the read disturb life time after 105 cycles write/erase operation is , more than 10 times longer in comparison with the conventional method. This memory cell by using the proposed write/erase operation method has superior potential for application to 256 Mbit Flash memories as beyond.

本文言語English
ページ(範囲)1317-1323
ページ数7
ジャーナルIEICE Transactions on Electronics
E80-C
10
出版ステータスPublished - 1997 1 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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