New three-dimensional integration technology using reconfigured wafers

Mitsumasa Koyanagi, Takafumi Fukushima, Tetsu Tanaka

研究成果: Conference contribution

抄録

We have proposed a new three-dimensional (3D) integration technology based on reconfigured wafer-on-wafer bonding technique to solve several problems in 3D integration technology using the conventional wafer-on-wafer bonding technique. 3D LSIs are fabricated by bonding the reconfigured wafers onto the supporting Si wafer. The reconfigured wafer consists of many known good dies (KGDs) which are arrayed and glued on a holding Si wafer with Si steps by chip self-assembly technique. Therefore, the yield of the reconfigured wafer can be 100%. As a result, we can obtain a high production yield even after bonding many wafers. In addition, it is not necessary in the reconfigured wafer that the chip size has to be identical within the wafer. Therefore, we can stack various kinds of chips with different chip sizes, different materials and different devices in our new 3D integration technology based on the configured-wafer-on-wafer bonding technique (Reconfig. W-on-W 3D technology).

本文言語English
ホスト出版物のタイトルICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
ページ1188-1191
ページ数4
DOI
出版ステータスPublished - 2008 12 1
イベント2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
継続期間: 2008 10 202008 10 23

出版物シリーズ

名前International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Other

Other2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
CountryChina
CityBeijing
Period08/10/2008/10/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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