New solar cells using Ge dots embedded in Si PIN structures

Noritaka Usami, Alguno Arnold, Kozo Fujiwara, Kazuo Nakajima, Takashi Yokoyama, Yasuhiro Shiraki

研究成果: Conference contribution

抄録

An attempt to embed stacked Ge dots in the intrinsic layer of Si-based PIN solar cells to improve the device performance was reported. The relationship between structural parameters and photovoltaic properties through systematic variation of the repetition number of staked Ge dots and Si spacer width to separate Ge dots was also discussed. The self-assembled Ge dots were grown via the Stranski-Krastanov growth mode separated by Si spacers, following to a 100-nm Si buffer layer. The external quantum efficiency in the infrared region of the solar cells with and without Ge dots in the intrinsic reqion was shown. The Ge coverage was fixed at 8 monolayers (ML), and the number of repetitions and the spacer layer thickness were systematically changes.

本文言語English
ホスト出版物のタイトル2004 1st IEEE International Conference on Group IV Photonics
ページ130-132
ページ数3
出版ステータスPublished - 2004 12月 1
イベント2004 1st IEEE International Conference on Group IV Photonics - Hong Kong, China, Hong Kong
継続期間: 2004 9月 292004 10月 1

出版物シリーズ

名前2004 1st IEEE International Conference on Group IV Photonics

Other

Other2004 1st IEEE International Conference on Group IV Photonics
国/地域Hong Kong
CityHong Kong, China
Period04/9/2904/10/1

ASJC Scopus subject areas

  • 工学(全般)

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