New silicon-on-insulator (SOI) flash memory with side channel and side floating gate

Hoon Choi, Tadao Tanabe, Noriyuki Kotaki, Kwang Wook Koh, Jeoung Chill Shim, Ki Tae Park, Hiroyuki Kurino, Mitsumasa Koyanagi

研究成果: Article査読

1 被引用数 (Scopus)

抄録

A new silicon-on-insulator (SOI) flash memory with a side channel and side floating gate has been proposed to reduce the power consumption and to increase the packing density in this paper. We utilized atomic layer doping (ALD) method for forming the ultra shallow junction on the side surface of the device. The threshold voltage shift of 0.25 V was obtained for small erasing/writing voltages in a 0.1 μm SOI flash memory. This device can be operated with a small number of electrons.

本文言語English
ページ(範囲)3361-3363
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
42
6 A
DOI
出版ステータスPublished - 2003 6

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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