New semiconductor materials and devices for terahertz imaging and sensing

T. Otsuji, T. Watanabe, K. Akagawa, Y. Tanimoto, S. Boubanga Tombet, T. Suemitsu, D. Coquillat, W. Knap, S. Chan, V. Ryzhii

研究成果: Conference contribution

抄録

Recent advances in materials and device structures for terahertz imaging and sensing technology are reviewed. The fundamental physical principle for terahertz imaging/sensing is focused on the nonlinear dynamics of plasmons in two-dimensional semiconductors including quantum wells in III-V based heterostructures as well as graphene.

本文言語English
ホスト出版物のタイトルIEEE Sensors 2011 Conference, SENSORS 2011
ページ44-47
ページ数4
DOI
出版ステータスPublished - 2011 12 1
イベント10th IEEE SENSORS Conference 2011, SENSORS 2011 - Limerick, Ireland
継続期間: 2011 10 282011 10 31

出版物シリーズ

名前Proceedings of IEEE Sensors

Other

Other10th IEEE SENSORS Conference 2011, SENSORS 2011
CountryIreland
CityLimerick
Period11/10/2811/10/31

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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