New radical-control method for SiO2 etching with non-perfluorocompound gas chemistries

Seiji Samukawa, Ken Ichiro Tsuda

研究成果: Article査読

24 被引用数 (Scopus)

抄録

To control radical generation in the etching of silicon dioxide, we propose a new radical control method using the iodofluorocarbon chemistries in ultra-high-frequency (UHF) plasma we developed. In the UHF plasma, the mean electron energy is about 2eV and there are a small number of high-energy electrons. The plasma can only dissociate C-I bonds (2.0eV) in the iodofluorocarbon plasma (CF3I, C2F5I) and it mainly generates CF3 and CF2 radicals. The ratio of each radical density can then be precisely controlled by changing the ratio of the mixture of CF3I and C2F5I. As a result, etching selectivity and microloading effects arc drastically improved. The iodofluorocarbon species are also alternatives to perfluorocarbon chemistries (PFCs) from an environmental standpoint.

本文言語English
ページ(範囲)L1095-L1097
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
37
10 PART A
DOI
出版ステータスPublished - 1998 10月 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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