A new plasma source, characterized as low electron temperature of 1 eV and high density of 1012 cm-3, is introduced to the Al oxidation process in the magnetic tunnel junction (MTJ) fabrication. The MTJ fabricated with this new plasma source shows a high magnetoresistance ratio of about 50%. As a peculiar feature, the monotonous decrease of resistance area (RA) product is observed with increasing the postannealing temperature of MTJ. The decrease of the RA product is due to the decrease of the effective barrier width, which is a favorable feature to realize a low-resistance MTJ.
|ジャーナル||IEEE Transactions on Magnetics|
|出版ステータス||Published - 2002 9 1|
|イベント||2002 International Magnetics Conference (Intermag 2002) - Amsterdam, Netherlands|
継続期間: 2002 4 28 → 2002 5 2
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering