New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using sputtering technique with a special sputtering target. The size and the density of the MND in the film are typically 2-3nm and around 2 × 10 13/cm 2, respectively, which were superior to that of Si quantum dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版ステータス||Published - 2003 12月 1|
|イベント||IEEE International Electron Devices Meeting - Washington, DC, United States|
継続期間: 2003 12月 8 → 2003 12月 10
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