New Non-Volatile Memory with Extremely High Density Metal Nano-Dots

M. Takata, S. Kondoh, T. Sakaguchi, H. Choi, J. C. Shim, H. Kurino, M. Koyanagi

研究成果: Conference article査読

49 被引用数 (Scopus)

抄録

New non-volatile memory with extremely high density metal nano-dots, MND (Metal Nano-Dot) memory, was proposed and fundamental characteristics of the MND memory were evaluated. MND film is used as a charge retention layer in the MND memory. The MND film consists of the thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using sputtering technique with a special sputtering target. The size and the density of the MND in the film are typically 2-3nm and around 2 × 10 13/cm 2, respectively, which were superior to that of Si quantum dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.

本文言語English
ページ(範囲)553-556
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 2003 12月 1
イベントIEEE International Electron Devices Meeting - Washington, DC, United States
継続期間: 2003 12月 82003 12月 10

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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