An accurate NBTI evaluation method is developed and the degradation mechanism caused by the NBT stress is also discussed. The impact of the carrier distribution and energy in the inversion layer to the NBTI degradation is clarified using the device simulator and theoretical calculation. The device simulation and theoretical calculation results depict that an excess stress such as a high voltage and temperature excites some holes to high energy levels. A presence of those high energy holes (warm holes) makes the accurate NBTI lifetime prediction difficult. On the other hand, the developed model can easily evaluate the NBTI degradation because it does not excite any warm hole. Finally, the NBTI lifetime prediction using the developed model is demonstrated.
|出版ステータス||Published - 2005 12 1|
|イベント||5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States|
継続期間: 2005 10 16 → 2005 10 20
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