New model of nucleation and growth in a thin layer between two interfaces

Takashi Tagami, Shun Ichiro Tanaka

研究成果: Article査読

2 被引用数 (Scopus)

抄録

In a-Si/SiO x multilayers, nucleation is random and growth stops at the interfaces. An expression for the halt in growth is derived from the free energy change of a crystallite between two interfaces. This expression supports that the halt in growth occurs in thin layers. The halt in growth causes a serious problem in that the crystalline fraction is overestimated in the Kolmogorov-Johnson-Mehl-Avrami model because phantom crystallites grow partially outside the crystalline region. The present model successfully corrects the crystalline fraction by introducing a generation probability which accounts for the effective size of the phantoms.

本文言語English
ページ(範囲)147-150
ページ数4
ジャーナルApplied Surface Science
117-118
DOI
出版ステータスPublished - 1997 6 2
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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