New magnetic flash memory with FePt magnetic floating gate

Cheng Kuan Yin, Ji Chel Bea, Youn Gi Hong, Takafumi Fukushima, Masanobu Miyao, Kenji Natori, Mitsumasa Koyanagi

研究成果: Article査読

4 被引用数 (Scopus)

抄録

A novel flash memory which has FePt magnetic floating gate was proposed. An FePt magnetic floating gate with a high coercivity was successfully fabricated by DC magnetron sputtering with rapid thermal annealing. As for magnetic properties, the switching magnetic fields of 21 Oe for the NiFe film and 1600 Oe for the FePt film were employed for the control gate and the floating gate materials, respectively. The fundamental characteristics of the magnetic flash memory were confirmed using magnetic metal oxide semiconductor (MOS) capacitor devices and magnetic tunneling diode (MTD) devices.

本文言語English
ページ(範囲)3217-3221
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
4 B
DOI
出版ステータスPublished - 2006 4 25

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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