New findings in nano-scale interface physics and their relations to nano-CMOS technologies

K. Shiraishi, Y. Akasaka, K. Torii, T. Nakayama, S. Miyazaki, T. Nakaoka, H. Watanabe, K. Ohmori, P. Ahmet, T. Chikyow, Y. Nara, K. Yamada

研究成果: Conference contribution

抜粋

We show the new findings in nano-scale interface physics and atomistic beheviors of defects in gate dielectric materials. In this paper, we first discuss the relation between defect behaviors and transistor characteristics. Next, we introduce our newly prosed mechanism of Fermi level pinning governed by the interface reaction. Further, we show that conventional charge neutrality level concept does not applicable to metal/high-k dielectric interfaces, and we propose a generalized charge neutrality level concept that includes both nano-scale interface structures and metal band structures. Finally, we discuss the atomistic investigation on the characteristics of conventional Si/SiO2 nemo interfaces

元の言語English
ホスト出版物のタイトル1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
ページ180-208
ページ数29
DOI
出版物ステータスPublished - 2006
イベント1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 - Mishima, Shizuoka, Japan
継続期間: 2006 1 302006 2 1

出版物シリーズ

名前2006 International Workshop on Nano CMOS - Proceedings, IWNC

Other

Other1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006
Japan
Mishima, Shizuoka
期間06/1/3006/2/1

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • これを引用

    Shiraishi, K., Akasaka, Y., Torii, K., Nakayama, T., Miyazaki, S., Nakaoka, T., Watanabe, H., Ohmori, K., Ahmet, P., Chikyow, T., Nara, Y., & Yamada, K. (2006). New findings in nano-scale interface physics and their relations to nano-CMOS technologies. : 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006 (pp. 180-208). [4570992] (2006 International Workshop on Nano CMOS - Proceedings, IWNC). https://doi.org/10.1109/IWNC.2006.4570992