New era of silicon technologies due to radical reaction based semiconductor manufacturing

Tadahiro Ohmi, Masaki Hirayama, Akinobu Teramoto

研究成果: Article査読

98 被引用数 (Scopus)

抄録

Current semiconductor technology, the so-called the molecule reaction based semiconductor manufacturing, now faces a very severe standstill due to the drastic increase of gate leakage currents and drain leakage currents. Radical reaction based semiconductor manufacturing has been developed to completely overcome the current standstill by introducing microwave excited high density plasma with very low electron temperatures and without accompanying charge-up damage. The introduction of radical reaction based semiconductor manufacturing has made it possible to fabricate LSI devices on any crystal orientation Si substrate surface as well as (100) Si substrate surfaces, and to eliminate a very severe limitation to the antenna ratio in the circuit layout patterns, which is strictly limited to less than 100-200 in order to obtain a relatively high production yield.

本文言語English
ページ(範囲)R1-R17
ジャーナルJournal of Physics D: Applied Physics
39
1
DOI
出版ステータスPublished - 2006 1月 7
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

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