TY - JOUR
T1 - New analytical model for subthreshold current in short-channel fully-depleted SOI MOSFETs
AU - Pidin, Sergey
AU - Koyanagi, Mitsumasa
PY - 1998/3
Y1 - 1998/3
N2 - A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.
AB - A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.
KW - SOI MOSFET
KW - Subthreshold current
KW - Two-dimensional model
UR - http://www.scopus.com/inward/record.url?scp=0008295198&partnerID=8YFLogxK
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U2 - 10.1143/jjap.37.1264
DO - 10.1143/jjap.37.1264
M3 - Article
AN - SCOPUS:0008295198
VL - 37
SP - 1264
EP - 1270
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3 SUPPL. B
ER -