New analytical model for subthreshold current in short-channel fully-depleted SOI MOSFETs

Sergey Pidin, Mitsumasa Koyanagi

研究成果: Article査読

5 被引用数 (Scopus)

抄録

A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.

本文言語English
ページ(範囲)1264-1270
ページ数7
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
37
3 SUPPL. B
DOI
出版ステータスPublished - 1998 3月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「New analytical model for subthreshold current in short-channel fully-depleted SOI MOSFETs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル