New 1.5 μm wavelength GaInAsp/InP distributed feedback laser

Y. Itaya, T. Matsuoka, Y. Nakano, Y. Suzuki, K. Kuroiwa, T. Ikegami

研究成果: Article査読

46 被引用数 (Scopus)

抄録

A new 1·5 μm-wavelength GalnAsP/lnP distributed feedback buried-heterostructure laser was fabricated by a threestep LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from – 20°C to 55°C was obtained.

本文言語English
ページ(範囲)1006-1008
ページ数3
ジャーナルElectronics Letters
18
23
DOI
出版ステータスPublished - 1982 11 11
外部発表はい

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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