Neutral beam technology-defect-free nanofabrication for novel nano-materials and nano-devices

研究成果: Conference contribution

抄録

Advances in plasma process technology have contributed directly to advances in the miniaturization and integration of semiconductor devices. However, in semiconductor devices that encroach on the nanoscale domain, defects or damage can be caused by charged particles and ultraviolet rays emitted from the plasma, severely impairing the characteristics of nano-devices that have a larger surface than bulk areas. It is therefore essential to develop a method for suppressing or controlling charge accumulation and ultraviolet damage in plasma processing. The neutral beam process developed by the authors is a method that suppresses the formation of defects at the atomic layer level in the processed surface, allowing ideal surface chemical reactions to take place at room temperature. This technique is indispensable to develop future innovative nano-devices.

本文言語English
ホスト出版物のタイトル2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
編集者Ru Huang, Ting-Ao Tang, Yu-Long Jiang
出版社Institute of Electrical and Electronics Engineers Inc.
ページ314-316
ページ数3
ISBN(電子版)9781467397179
DOI
出版ステータスPublished - 2016
イベント13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China
継続期間: 2016 10 252016 10 28

出版物シリーズ

名前2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Other

Other13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
国/地域China
CityHangzhou
Period16/10/2516/10/28

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 安全性、リスク、信頼性、品質管理
  • 電子材料、光学材料、および磁性材料

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