Negative anisotropic magnetoresistance in γ'-Fe 4N epitaxial films on SrTiO 3(001) grown by molecular beam epitaxy

Keita Ito, Kazuki Kabara, Hirokazu Takahashi, Tatsunori Sanai, Kaoru Toko, Takashi Suemasu, Masakiyo Tsunoda

研究成果: Article査読

30 被引用数 (Scopus)

抄録

We observed the negative anisotropic magnetoresistance (AMR) effect in γ'-Fe 4N epitaxial films grown on SrTiO 3(001) substrates using molecular beam epitaxy. The AMR ratio was increased immediately below 50 K. The angular dependence of AMR ratio contained not only cos 2θ but also cos 4θ components, and the sign of Fourier coefficient of cos 4θ term was changed around 10 K. These behaviors are in good agreement with those already reported for γ'-Fe 4N pseudo-single-crystal films on MgO(001) substrates formed by sputtering. These behaviors might be attributed to temperature dependence of electronic or magnetic structure specific to γ'-Fe 4N.

本文言語English
論文番号068001
ジャーナルJapanese journal of applied physics
51
6 PART 1
DOI
出版ステータスPublished - 2012 6月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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