Near room temperature CW operation of 660 nm visible AlGaAs Multi-Quantum-Well laser diodes grown by molecular beam epitaxy

Hidetoshi Iwamura, Tadashi Saku, Yoshiro Hirayama, Yoshifumi Suzuki, Hiroshi Okamoto

研究成果: Article査読

9 被引用数 (Scopus)

抄録

CW operation of 0°C at a wavelength of 660 nm was achieved by AlGaAs multi-qunatum-well laser diodes which were fabricated from a wafer grown by molecular beam epitaxy. With a 10//m-wide stripe geometry laser structure, the threshold current density was as low as 5.5 kA/cm2 (pulse) and 8 kA/cm2 (cw). The shortest wavelength for pulse operation was 645 nm at 20°C.

本文言語English
ページ(範囲)L911-L913
ジャーナルJapanese journal of applied physics
24
12
DOI
出版ステータスPublished - 1985 12
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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