The evaluation method of Negative Bias Temperature Instability (NBTI) based on hole-injection is proposed for accurate lifetime prediction of MOS devices. The acceleration parameters are most important for accurate lifetime prediction. Proposed acceleration parameter is not the applied voltage to the gate insulator film and the temperature but the injected hole injection quantity to the gate insulator film. The degradation mechanism in the excessive voltage and excessive temperature stresses are different from that in the operation conditions. In the relatively high hole-injection stress, the mechanism is also different from that in the operation conditions. It is considered that the difference is caused by the excess enhancement of the hole energy in the inversion layer. In the relatively low hole-injection stress, the degradation mechanism becomes the same as that in the operation conditions. The accurate lifetime prediction in MOSFET level and circuit level can be realized by hole-injection acceleration method.