NBTI mechanism based on hole-injection for accurate lifetime prediction

Akinobu Teramoto, Rihito Kuroda, Tadahiro Ohmi

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

The evaluation method of Negative Bias Temperature Instability (NBTI) based on hole-injection is proposed for accurate lifetime prediction of MOS devices. The acceleration parameters are most important for accurate lifetime prediction. Proposed acceleration parameter is not the applied voltage to the gate insulator film and the temperature but the injected hole injection quantity to the gate insulator film. The degradation mechanism in the excessive voltage and excessive temperature stresses are different from that in the operation conditions. In the relatively high hole-injection stress, the mechanism is also different from that in the operation conditions. It is considered that the difference is caused by the excess enhancement of the hole energy in the inversion layer. In the relatively low hole-injection stress, the degradation mechanism becomes the same as that in the operation conditions. The accurate lifetime prediction in MOSFET level and circuit level can be realized by hole-injection acceleration method.

本文言語English
ホスト出版物のタイトルECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics
ページ229-243
ページ数15
3
DOI
出版ステータスPublished - 2007 12 1
イベントSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting - Chicago, IL, United States
継続期間: 2007 5 62007 5 11

出版物シリーズ

名前ECS Transactions
番号3
6
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period07/5/607/5/11

ASJC Scopus subject areas

  • Engineering(all)

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