TY - GEN
T1 - Nanostructured asymmetric dual-grating-gate plasmonic THz detectors
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
AU - Kasuya, F.
AU - Taniguchi, H.
AU - Watanabe, T.
AU - Suemitsu, T.
AU - Otsuji, T.
AU - Takida, Y.
AU - Ito, H.
AU - Minamide, H.
AU - Ishibashi, T.
AU - Shimizu, M.
AU - Satou, A.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - We experimentally verify that the low external responsivity of nanostructured asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors developed so far is attributed to their low external coupling efficiency. We separately demonstrate (1) 4-fold enhancement of the efficiency by an array of series-connected 4×1 detectors due to the increase in the effective active area and (2) 6-fold enhancement by the silicon-lens integration due to the better focusing inside the silicon lens. Those preliminary results indicate a possibility of enhancing external responsivities of A-DGG HEMTs up to their intrinsic values.
AB - We experimentally verify that the low external responsivity of nanostructured asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors developed so far is attributed to their low external coupling efficiency. We separately demonstrate (1) 4-fold enhancement of the efficiency by an array of series-connected 4×1 detectors due to the increase in the effective active area and (2) 6-fold enhancement by the silicon-lens integration due to the better focusing inside the silicon lens. Those preliminary results indicate a possibility of enhancing external responsivities of A-DGG HEMTs up to their intrinsic values.
UR - http://www.scopus.com/inward/record.url?scp=85006942232&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85006942232&partnerID=8YFLogxK
U2 - 10.1109/NANO.2016.7751467
DO - 10.1109/NANO.2016.7751467
M3 - Conference contribution
AN - SCOPUS:85006942232
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 116
EP - 118
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 22 August 2016 through 25 August 2016
ER -