Nanostructured asymmetric dual-grating-gate plasmonic THz detectors: Enhancement of external coupling efficiency by array configuration and silicon-lens integration

F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, A. Satou

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We experimentally verify that the low external responsivity of nanostructured asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors developed so far is attributed to their low external coupling efficiency. We separately demonstrate (1) 4-fold enhancement of the efficiency by an array of series-connected 4×1 detectors due to the increase in the effective active area and (2) 6-fold enhancement by the silicon-lens integration due to the better focusing inside the silicon lens. Those preliminary results indicate a possibility of enhancing external responsivities of A-DGG HEMTs up to their intrinsic values.

本文言語English
ホスト出版物のタイトル16th International Conference on Nanotechnology - IEEE NANO 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ116-118
ページ数3
ISBN(電子版)9781509039142
DOI
出版ステータスPublished - 2016 11 21
イベント16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
継続期間: 2016 8 222016 8 25

出版物シリーズ

名前16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
国/地域Japan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学

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