Nanostructured asymmetric dual-grating-gate plasmonic THz detectors: Enhancement of external coupling efficiency by array configuration and silicon-lens integration

F. Kasuya; H. Taniguchi; T. Watanabe; T. Suemitsu; T. Otsuji; Y. Takida; H. Ito; H. Minamide; T. Ishibashi; M. Shimizu; A. Satou

doi:10.1109/NANO.2016.7751467

Nanostructured asymmetric dual-grating-gate plasmonic THz detectors: Enhancement of external coupling efficiency by array configuration and silicon-lens integration

F. Kasuya, H. Taniguchi, T. Watanabe, T. Suemitsu, T. Otsuji, Y. Takida, H. Ito, H. Minamide, T. Ishibashi, M. Shimizu, A. Satou

電気通信研究所・ブロードバンド工学研究部門

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We experimentally verify that the low external responsivity of nanostructured asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors developed so far is attributed to their low external coupling efficiency. We separately demonstrate (1) 4-fold enhancement of the efficiency by an array of series-connected 4×1 detectors due to the increase in the effective active area and (2) 6-fold enhancement by the silicon-lens integration due to the better focusing inside the silicon lens. Those preliminary results indicate a possibility of enhancing external responsivities of A-DGG HEMTs up to their intrinsic values.

本文言語	English
ホスト出版物のタイトル	16th International Conference on Nanotechnology - IEEE NANO 2016
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	116-118
ページ数	3
ISBN（電子版）	9781509039142
DOI	https://doi.org/10.1109/NANO.2016.7751467
出版ステータス	Published - 2016 11 21
イベント	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan 継続期間: 2016 8 22 → 2016 8 25

出版物シリーズ

名前	16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other	16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Country	Japan
City	Sendai
Period	16/8/22 → 16/8/25

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

文献へのアクセス

10.1109/NANO.2016.7751467

フィンガープリント「Nanostructured asymmetric dual-grating-gate plasmonic THz detectors: Enhancement of external coupling efficiency by array configuration and silicon-lens integration」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Kasuya, F., Taniguchi, H., Watanabe, T., Suemitsu, T., Otsuji, T., Takida, Y., Ito, H., Minamide, H., Ishibashi, T., Shimizu, M., & Satou, A. (2016). Nanostructured asymmetric dual-grating-gate plasmonic THz detectors: Enhancement of external coupling efficiency by array configuration and silicon-lens integration. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 116-118). [7751467] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751467

Nanostructured asymmetric dual-grating-gate plasmonic THz detectors : Enhancement of external coupling efficiency by array configuration and silicon-lens integration. / Kasuya, F.; Taniguchi, H.; Watanabe, T.; Suemitsu, T.; Otsuji, T.; Takida, Y.; Ito, H.; Minamide, H.; Ishibashi, T.; Shimizu, M.; Satou, A.

16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 116-118 7751467 (16th International Conference on Nanotechnology - IEEE NANO 2016).

研究成果: Conference contribution

Kasuya, F, Taniguchi, H, Watanabe, T , Suemitsu, T , Otsuji, T, Takida, Y, Ito, H, Minamide, H, Ishibashi, T, Shimizu, M & Satou, A 2016, Nanostructured asymmetric dual-grating-gate plasmonic THz detectors: Enhancement of external coupling efficiency by array configuration and silicon-lens integration. in 16th International Conference on Nanotechnology - IEEE NANO 2016., 7751467, 16th International Conference on Nanotechnology - IEEE NANO 2016, Institute of Electrical and Electronics Engineers Inc., pp. 116-118, 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016, Sendai, Japan, 16/8/22. https://doi.org/10.1109/NANO.2016.7751467

Kasuya F, Taniguchi H, Watanabe T , Suemitsu T , Otsuji T, Takida Y et al. Nanostructured asymmetric dual-grating-gate plasmonic THz detectors: Enhancement of external coupling efficiency by array configuration and silicon-lens integration. In 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 116-118. 7751467. (16th International Conference on Nanotechnology - IEEE NANO 2016). https://doi.org/10.1109/NANO.2016.7751467

Kasuya, F. ; Taniguchi, H. ; Watanabe, T. ; Suemitsu, T. ; Otsuji, T. ; Takida, Y. ; Ito, H. ; Minamide, H. ; Ishibashi, T. ; Shimizu, M. ; Satou, A. / Nanostructured asymmetric dual-grating-gate plasmonic THz detectors : Enhancement of external coupling efficiency by array configuration and silicon-lens integration. 16th International Conference on Nanotechnology - IEEE NANO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 116-118 (16th International Conference on Nanotechnology - IEEE NANO 2016).

@inproceedings{8c1b2568742b4d66b632215f7f7a19f7,

title = "Nanostructured asymmetric dual-grating-gate plasmonic THz detectors: Enhancement of external coupling efficiency by array configuration and silicon-lens integration",

abstract = "We experimentally verify that the low external responsivity of nanostructured asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors developed so far is attributed to their low external coupling efficiency. We separately demonstrate (1) 4-fold enhancement of the efficiency by an array of series-connected 4×1 detectors due to the increase in the effective active area and (2) 6-fold enhancement by the silicon-lens integration due to the better focusing inside the silicon lens. Those preliminary results indicate a possibility of enhancing external responsivities of A-DGG HEMTs up to their intrinsic values.",

author = "F. Kasuya and H. Taniguchi and T. Watanabe and T. Suemitsu and T. Otsuji and Y. Takida and H. Ito and H. Minamide and T. Ishibashi and M. Shimizu and A. Satou",

year = "2016",

month = nov,

day = "21",

doi = "10.1109/NANO.2016.7751467",

language = "English",

series = "16th International Conference on Nanotechnology - IEEE NANO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "116--118",

booktitle = "16th International Conference on Nanotechnology - IEEE NANO 2016",

note = "16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 ; Conference date: 22-08-2016 Through 25-08-2016",

}

TY - GEN

T1 - Nanostructured asymmetric dual-grating-gate plasmonic THz detectors

T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016

AU - Kasuya, F.

AU - Taniguchi, H.

AU - Watanabe, T.

AU - Suemitsu, T.

AU - Otsuji, T.

AU - Takida, Y.

AU - Ito, H.

AU - Minamide, H.

AU - Ishibashi, T.

AU - Shimizu, M.

AU - Satou, A.

PY - 2016/11/21

Y1 - 2016/11/21

N2 - We experimentally verify that the low external responsivity of nanostructured asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors developed so far is attributed to their low external coupling efficiency. We separately demonstrate (1) 4-fold enhancement of the efficiency by an array of series-connected 4×1 detectors due to the increase in the effective active area and (2) 6-fold enhancement by the silicon-lens integration due to the better focusing inside the silicon lens. Those preliminary results indicate a possibility of enhancing external responsivities of A-DGG HEMTs up to their intrinsic values.

AB - We experimentally verify that the low external responsivity of nanostructured asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors developed so far is attributed to their low external coupling efficiency. We separately demonstrate (1) 4-fold enhancement of the efficiency by an array of series-connected 4×1 detectors due to the increase in the effective active area and (2) 6-fold enhancement by the silicon-lens integration due to the better focusing inside the silicon lens. Those preliminary results indicate a possibility of enhancing external responsivities of A-DGG HEMTs up to their intrinsic values.

UR - http://www.scopus.com/inward/record.url?scp=85006942232&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85006942232&partnerID=8YFLogxK

U2 - 10.1109/NANO.2016.7751467

DO - 10.1109/NANO.2016.7751467

M3 - Conference contribution

AN - SCOPUS:85006942232

T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016

SP - 116

EP - 118

BT - 16th International Conference on Nanotechnology - IEEE NANO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 22 August 2016 through 25 August 2016

ER -