Nanostructure and strain field in vertically aligned nano-islands for Si/Ge 2D photonic nanocrystals

Takanori Kiguchi, Yusuke Hoshi, Takeshi Tayagaki, Noritaka Usami

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The local strain field and the intermixing of a Ge nano-islands (NIs)/Si spacer stacked structure in a novel solar cell with a p-i-n type Si single crystal with two-dimensional photonic nanocrystals connecting to the vertically aligned NIs were analyzed using electron microscopy. High-angle annular dark field-scanning transmission electron microscope (HAADF-STEM) images show intermixing between Ge and Si clearly and reveal that the surface segregation of Ge becomes advanced. The average composition of the NIs is Ge 0.42Si0.58, which is almost constant in a row of vertically aligned NIs. The local strain analysis results obtained from the high-resolution transmission electron microscope (HRTEM) images show that the strain state is partially relaxed after the elastic relaxation of NIs.

本文言語English
ホスト出版物のタイトルGroup IV Semiconductor Nanostructures and Applications
出版社Materials Research Society
ページ45-50
ページ数6
ISBN(印刷版)9781632661036
DOI
出版ステータスPublished - 2013
イベント2012 MRS Fall Meeting - Boston, MA, United States
継続期間: 2012 11 252012 11 30

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1510
ISSN(印刷版)0272-9172

Other

Other2012 MRS Fall Meeting
国/地域United States
CityBoston, MA
Period12/11/2512/11/30

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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