Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si

Yutaka Ohno, Kaihei Inoue, Kentaro Kutsukake, Momoko Deura, Takayuki Ohsawa, Ichiro Yonenaga, Hideto Yoshida, Seiji Takeda, Ryo Taniguchi, Hideki Otubo, Sigeto R. Nishitani, Naoki Ebisawa, Yasuo Shimizu, Hisashi Takamizawa, Koji Inoue, Yasuyoshi Nagai

研究成果: Article査読

13 被引用数 (Scopus)

抄録

We investigate copper (Cu) precipitation at small-angle tilt boundaries on (220) in Czochralski-grown p-type silicon (Si) ingots using transmission electron microscopy, atom probe tomography, and ab initio calculations. In the initial stage of precipitation, Cu atoms agglomerate along the boundaries, forming coherent layers (less than about 2 nm thick) of Cu3Si with a body-centered-cubic structure in a metastable state (a=0.285 nm). As the layers thicken, they become semicoherent with misfit dislocations on the (220) interphase boundaries, reducing coherency strains. Subsequently, the metastable layers convert into incoherent polyhedrons of orthorhombic η′′-Cu3Si in the equilibrium state, forming interphase boundaries on {112} in Si. These results are similar to the Cu precipitation processes found in metallic alloys: the formation of Guinier-Preston zones followed by a conversion into the equilibrium θ phase.

本文言語English
論文番号235315
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
91
23
DOI
出版ステータスPublished - 2015 6 17

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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