We studied a new method of patterning a metal layer on silicon surfaces in the nanometer range. The process combines anodic oxidation patterning with atomic force microscopy, deposition of a Au thin film on a patterned substrate and chemical etching of the Si oxide that lies underneath the Au film. When the thickness of the deposited Au film is 2-5 nm, by chemical etching to remove the SiO2 pattern, the Au film bent down, sticking to the Si surface. For a Au film of 1 nm thickness, it was possible to selectively remove the Au film on the SiO2 pattern by chemical etching of the SiO2 pattern.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 1999 12月 1|
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