Nanoscale patterning of Au films on Si surfaces by atomic force microscopy

Won Chul Moon, Tatsuo Yoshinobu, Hiroshi Iwasaki

研究成果: Article査読

5 被引用数 (Scopus)

抄録

We studied a new method of patterning a metal layer on silicon surfaces in the nanometer range. The process combines anodic oxidation patterning with atomic force microscopy, deposition of a Au thin film on a patterned substrate and chemical etching of the Si oxide that lies underneath the Au film. When the thickness of the deposited Au film is 2-5 nm, by chemical etching to remove the SiO2 pattern, the Au film bent down, sticking to the Si surface. For a Au film of 1 nm thickness, it was possible to selectively remove the Au film on the SiO2 pattern by chemical etching of the SiO2 pattern.

本文言語English
ページ(範囲)6952-6954
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
12 A
DOI
出版ステータスPublished - 1999 12月 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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