An investigation of ultrahigh-density ferroelectric data storage based on scanning nonlinear dielectric microscopy (SNDM) is described. For the purpose of obtaining fundamental knowledge on high-density ferroelectric data storage, several experiments on nanodomain formation in a lithium tantalate (LiTaO 3) single crystal were conducted. Through domain engineering, a domain dot array with an areal density of 1.5 Tbit/inch 2 was formed on congruent LiTaO 3 (CLT). Sub-nanosecond (500 psec) domain switching speed also has been achieved. Next, actual information storage is demonstrated at a density of 1 Tbit/inch 2. Finally, it is described that application of a very small dc offset voltage is very effective in accelerating the domain switching speed and in stabilizing the reversed nano-domain dots. Applying this offset application technique, we formed a smallest artificial nano-domain single dot of 5.1 nm in diameter and artificial nano-domain dot-array with a memory density of 10.1 Tbit/inch 2 and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date.
|ジャーナル||Journal of Nanoscience and Nanotechnology|
|出版ステータス||Published - 2007 1月 1|
ASJC Scopus subject areas
- 化学 (全般)