Nanoscale epitaxial growth of GaN on freestanding circular GaN grating

Yongjin Wang, Fangren Hu, Kazuhiro Hane

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Freestanding circular GaN gratings are fabricated on a GaN-on-silicon substrate, and epitaxial growth of GaN is subsequently conducted on the prepared GaN template by molecular beam epitaxy growth. With the assistance of circular GaN gratings, the surface diffusion is improved and thus, the selective growth of GaN takes place. Epitaxial circular gratings with InGaN/GaN multiple quantum wells are generated with self-organized lateral facets and demonstrate the promising photoluminescence performances. This work provides a feasible approach to produce integrated GaN-Si devices by a combination of fast atom beam etching of GaN, silicon micromachining and epitaxial growth of GaN.

本文言語English
ホスト出版物のタイトル2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
ページ163-164
ページ数2
DOI
出版ステータスPublished - 2010 12月 1
イベント2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010 - Sapporo, Japan
継続期間: 2010 8月 92010 8月 12

出版物シリーズ

名前2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010

Other

Other2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
国/地域Japan
CitySapporo
Period10/8/910/8/12

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 電子工学および電気工学

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