TY - JOUR
T1 - Nanoscale Al patterning on an STM-manipulated Si surface
AU - Ono, T.
AU - Hamanaka, H.
AU - Kurabayashi, T.
AU - Minami, Kimitaka
AU - Esashi, Masayoshi
PY - 1996/8/1
Y1 - 1996/8/1
N2 - Selective deposition of H atoms on silicon was achieved by using a UHV-STM with a Pd tip. The deposition of hydrogen atoms occurs on the Si(100) 2×1 surface at a negative sample bias in a pressure of 1×10-10 Torr. The H atom adsorbed sites appear dark in a constant current mode in an STM image. H atoms are supplied from the Pd tip, while, at a positive bias, adsorbed H atoms get desorbed. The surface was selectively oxidized by exposing it to oxygen (1.0 × 10-5 Torr, 60 s, at room temperature). Nanoscale Al patterns were made by selective Al CVD on the H-terminated Si surface using DMAH (dimethylaluminium hydride) as a gas source.
AB - Selective deposition of H atoms on silicon was achieved by using a UHV-STM with a Pd tip. The deposition of hydrogen atoms occurs on the Si(100) 2×1 surface at a negative sample bias in a pressure of 1×10-10 Torr. The H atom adsorbed sites appear dark in a constant current mode in an STM image. H atoms are supplied from the Pd tip, while, at a positive bias, adsorbed H atoms get desorbed. The surface was selectively oxidized by exposing it to oxygen (1.0 × 10-5 Torr, 60 s, at room temperature). Nanoscale Al patterns were made by selective Al CVD on the H-terminated Si surface using DMAH (dimethylaluminium hydride) as a gas source.
KW - Chemical vapour deposition (CVD)
KW - Scanning tunnelling microscopy (STM)
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U2 - 10.1016/0040-6090(96)08705-6
DO - 10.1016/0040-6090(96)08705-6
M3 - Article
AN - SCOPUS:0030218619
VL - 281-282
SP - 640
EP - 643
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -