Nanoscale Al patterning on an STM-manipulated Si surface

T. Ono, H. Hamanaka, T. Kurabayashi, Kimitaka Minami, Masayoshi Esashi

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Selective deposition of H atoms on silicon was achieved by using a UHV-STM with a Pd tip. The deposition of hydrogen atoms occurs on the Si(100) 2×1 surface at a negative sample bias in a pressure of 1×10-10 Torr. The H atom adsorbed sites appear dark in a constant current mode in an STM image. H atoms are supplied from the Pd tip, while, at a positive bias, adsorbed H atoms get desorbed. The surface was selectively oxidized by exposing it to oxygen (1.0 × 10-5 Torr, 60 s, at room temperature). Nanoscale Al patterns were made by selective Al CVD on the H-terminated Si surface using DMAH (dimethylaluminium hydride) as a gas source.

本文言語English
ページ(範囲)640-643
ページ数4
ジャーナルThin Solid Films
281-282
1-2
DOI
出版ステータスPublished - 1996 8 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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