GaN films grown on sapphire substrates by conventional molecular-beam epitaxy were investigated by means of atomic-resolution high-voltage electron microscopy (ARHVEM). The atomic positions of Ga and N could be directly discriminated by ARHVEM to determine the polarity in GaN. It was revealed that N polarity GaN films possessed a high density of nanometric inversion domains (IDs) with Ga polarity. The ID boundary was constructed by an inversion and a c/2 translation, and formed fourfold and eightfold coordination along the boundary.
|ジャーナル||Applied Physics Letters|
|出版ステータス||Published - 2001 12月 10|
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