抄録
GaN films grown on sapphire substrates by conventional molecular-beam epitaxy were investigated by means of atomic-resolution high-voltage electron microscopy (ARHVEM). The atomic positions of Ga and N could be directly discriminated by ARHVEM to determine the polarity in GaN. It was revealed that N polarity GaN films possessed a high density of nanometric inversion domains (IDs) with Ga polarity. The ID boundary was constructed by an inversion and a c/2 translation, and formed fourfold and eightfold coordination along the boundary.
本文言語 | English |
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ページ(範囲) | 3941-3943 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 79 |
号 | 24 |
DOI | |
出版ステータス | Published - 2001 12月 10 |
ASJC Scopus subject areas
- 物理学および天文学(その他)