Nanometric inversion domains in conventional molecular-beam-epitaxy GaN thin films observed by atomic-resolution high-voltage electron microscopy

C. Iwamoto, X. Q. Shen, H. Okumura, H. Matuhata, Y. Ikuhara

    研究成果: Article査読

    23 被引用数 (Scopus)

    抄録

    GaN films grown on sapphire substrates by conventional molecular-beam epitaxy were investigated by means of atomic-resolution high-voltage electron microscopy (ARHVEM). The atomic positions of Ga and N could be directly discriminated by ARHVEM to determine the polarity in GaN. It was revealed that N polarity GaN films possessed a high density of nanometric inversion domains (IDs) with Ga polarity. The ID boundary was constructed by an inversion and a c/2 translation, and formed fourfold and eightfold coordination along the boundary.

    本文言語English
    ページ(範囲)3941-3943
    ページ数3
    ジャーナルApplied Physics Letters
    79
    24
    DOI
    出版ステータスPublished - 2001 12月 10

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

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