In this paper, we report on the fabrication method of a freestanding carbon nanotube (CNT) bridged between opposing silicon electrodes with a narrow gap (0.5-5 μm) that was fabricated by a silicon micromachining technique. After the metallization of nickel (Ni) or iron (Fe) as a catalyst for CNT growth, the CNT was grown between these electrodes with the application of a voltage of 30V during the growth by hot-filament chemical vapor deposition (HF-CVD) using acetylene diluted by hydrogen, as a source gas. The CNT was grown from the negative electrode to the other electrode. From the measurement of current-voltage (I-V) characteristics, the contact between the CNT and the silicon electrode shows ohmic behavior and the resistivity of the CNT was estimated to be approximately 4 × 10-5 ωcm. This nanofabrication technique will be applicable to the nanomechanical elements integrated an individual CNT.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2004 2|
ASJC Scopus subject areas
- Physics and Astronomy(all)