抄録
This paper gives a brief review of our recent work on a new method of nanoscale pattern formation of thin oxide film on Si substrate by using a scanning tunnelling microscope (STM): A field-emitted electron beam (e-beam) extracted from the STM tip is used for selective removal of the oxide film by e-beam-induced reduction and thermal annealing at moderately high temperatures (300-700 °C). The process is dependent on electron dose and the patterning is controllable by adjusting the emission current and exposure time. One can draw nanoscale open-window patterns directly on oxide-covered Si substrates, e.g. lines and concentric circles of a few tens of nanometres in line width and spacing. Such patterning on the Si oxide layer shows good reproducibility and flexibility of the nanofabrication method, which suggests a further development and application of this method in nanotechnology. The beam profile of the extracted e-beam is measured and the beam-energy dependence of the quantum yield of the process is derived. Based on the excitation function, we consider that the decomposition is activated by core-level excitations as is the Knotek-Feibelman mechanism. One can also make use of this technique to diagnose the Si/SiO2 interface topography on a sub-nanometre scale.
本文言語 | English |
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ページ(範囲) | R55-R62 |
ジャーナル | Nanotechnology |
巻 | 14 |
号 | 11 |
DOI | |
出版ステータス | Published - 2003 11月 |
外部発表 | はい |
ASJC Scopus subject areas
- バイオエンジニアリング
- 化学 (全般)
- 材料科学(全般)
- 材料力学
- 機械工学
- 電子工学および電気工学