Nanoindentation measurements of a highly oriented wurtzite-Type boron nitride bulk crystal

Momoko Deura, Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga, Takashi Taniguchi

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We succeeded in synthesizing a bulk crystal of wurtzite-Type boron nitride (w-BN) by the direct conversion method. The synthesized crystal was approximately 2mm wide and 350μm thick, and highly oriented to the c-Axis. We performed nanoindentation measurements on the c-plane of the w-BN crystal at room temperature to evaluate the mechanical properties of w-BN. The hardness and Young's modulus of w-BN from the obtained curves were simultaneously determined to be 54 + 2 and 860 + 40GPa, respectively. The underlying physical mechanism that dominates the mechanical properties of group-III nitride semiconductors is also examined.

本文言語English
論文番号030301
ジャーナルJapanese journal of applied physics
56
3
DOI
出版ステータスPublished - 2017 3

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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