Nanofabrication on Si oxide with scanning tunneling microscope: Mechanism of the low-energy electron-stimulated reaction

Nan Li, Tatsuo Yoshinobu, Hiroshi Iwasaki

研究成果: Article査読

24 被引用数 (Scopus)

抄録

Nanofabrication on Si oxide with a low-energy electron-beam-stimulated reaction has been demonstrated using scanning tunneling microscopy (STM) and the mechanism of the low-energy electron-induced etching is investigated further. Direct fabrication of a thin Ag film with this low-energy e-beam/STM method was also tested, which shows an additional capability of the nanofabrication technique. Nanometer-scale patterning of rings on a thin Si-oxide layer using this method shows that further progress nanolithography can be expected with the fabricated Si oxide as a mask.

本文言語English
ページ(範囲)1621-1623
ページ数3
ジャーナルApplied Physics Letters
74
11
DOI
出版ステータスPublished - 1999
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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