Nanocrystalline diamond formation by using an inductively coupled radio-frequency CH4/H2/Ar plasma

Reijiro Ikada, Satoru Iizuka

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Effect of gas-mixing ratio on the formation of nanocrystalline diamond has been investigated in a low electron temperature CH4/H2/Ar plasma produced by inductively coupled rf discharge. The gas-mixing ratio is controlled by introducing an orifice between the plasma production region and the deposition region. When the diameter of the orifice is 6 mm, the Raman spectrum indicating a deposition of nanocrystalline diamond is observed when the gas-mixing ratio is less than ∼0.03. The reduction of CH4 gas-mixing ratio is important for the formation of nanocrystalline diamonds.

本文言語English
ページ(範囲)446-450
ページ数5
ジャーナルDiamond and Related Materials
14
3-7
DOI
出版ステータスPublished - 2005 3月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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