Effect of gas-mixing ratio on the formation of nanocrystalline diamond has been investigated in a low electron temperature CH4/H2/Ar plasma produced by inductively coupled rf discharge. The gas-mixing ratio is controlled by introducing an orifice between the plasma production region and the deposition region. When the diameter of the orifice is 6 mm, the Raman spectrum indicating a deposition of nanocrystalline diamond is observed when the gas-mixing ratio is less than ∼0.03. The reduction of CH4 gas-mixing ratio is important for the formation of nanocrystalline diamonds.
|ジャーナル||Diamond and Related Materials|
|出版ステータス||Published - 2005 3月|
ASJC Scopus subject areas
- 化学 (全般)