抄録
Effect of gas-mixing ratio on the formation of nanocrystalline diamond has been investigated in a low electron temperature CH4/H2/Ar plasma produced by inductively coupled rf discharge. The gas-mixing ratio is controlled by introducing an orifice between the plasma production region and the deposition region. When the diameter of the orifice is 6 mm, the Raman spectrum indicating a deposition of nanocrystalline diamond is observed when the gas-mixing ratio is less than ∼0.03. The reduction of CH4 gas-mixing ratio is important for the formation of nanocrystalline diamonds.
本文言語 | English |
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ページ(範囲) | 446-450 |
ページ数 | 5 |
ジャーナル | Diamond and Related Materials |
巻 | 14 |
号 | 3-7 |
DOI | |
出版ステータス | Published - 2005 3月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 化学 (全般)
- 機械工学
- 材料化学
- 電子工学および電気工学