Nano-wire formation and selective adhesion on substrates by single ion track reaction in polysilanes

S. Seki, S. Tsukuda, Y. Yoshida, T. Kozawa, S. Tagawa, M. Sugimoto, S. Tanaka

研究成果: Conference contribution

抄録

High density energy deposition by ion beams causes non-homogeneous crosslinking reaction of polysilane derivatives within a nano-sized cylindrical area along an ion trajectory, and gives β-SiC based nano-wires of which sizes (length, thickness) and number densities are completely under control by changing the parameters of incident ion beams and molecular sizes of target polymers. Recently the techniques of position-selective single ion hitting have been developed for MeV order ion beams, however it is not sufficient to control precisely the positions of the nano-wires on the substrates. In the present study, we report the selective adhesion of nano-wires on Si substrates by the surface treatments before polymer coating, which enables the patterning of planted nano-wires on substrates and/or electrodes as candidates for nano-sized field emissive cathodes or electro-luminescent devices.

本文言語English
ホスト出版物のタイトル2002 International Microprocesses and Nanotechnology Conference, MNC 2002
出版社Institute of Electrical and Electronics Engineers Inc.
ページ140-141
ページ数2
ISBN(電子版)4891140313, 9784891140311
DOI
出版ステータスPublished - 2002 1 1
外部発表はい
イベントInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
継続期間: 2002 11 62002 11 8

出版物シリーズ

名前2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2002
CountryJapan
CityTokyo
Period02/11/602/11/8

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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