Nano-scale Cu direct bonding using ultra-high density Cu nano-pillar (CNP) for high yield exascale 2.5/3D integration applications

Kanuku Ri, Ai Nakamura, Jicheol Bea, Takafumi Fukushima, Suresh Ramalingam, Xin Wu, Tanaka Tanaka, Mitsumasa Koyanagi

研究成果: Conference contribution

抄録

We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with 80μm height is around 30 mΩ for each pair of 10μm electrode diameter. Normalized capacitance of CNP bundle with 80μm height is 0.2 fF per μm wire length.

本文言語English
ホスト出版物のタイトル2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509013999
DOI
出版ステータスPublished - 2017 7 5
イベント2016 IEEE International 3D Systems Integration Conference, 3DIC 2016 - San Francisco, United States
継続期間: 2016 11 82016 11 11

出版物シリーズ

名前2016 IEEE International 3D Systems Integration Conference, 3DIC 2016

Other

Other2016 IEEE International 3D Systems Integration Conference, 3DIC 2016
国/地域United States
CitySan Francisco
Period16/11/816/11/11

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子材料、光学材料、および磁性材料
  • コンピュータ ネットワークおよび通信

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