We have investigated poly-Si gate pattern on HfO2/SiO 2/Si stack structures by scanning photoemission microscopy using synchrotron radiation. Gate-pattern images have been successfully obtained by scanning the sample position during acquisitions of core-level photoemission spectra. Si 2p, Hf 4f, and O 1s core-level spectra systematically change for different sample positions, which suggests that light source focused by the zone plate is effectively utilized for nano-scale characterization of chemical states in device-pattern structures. We have also demonstrated that etching velocities of HfO2 films on a Si substrate and shallow trench isolation vary when exposing the poly-Si gate pattern to dry etching processes.
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