Nano-scale characterization of poly-Si gate on high-k gate stack structures by scanning photoemission microscopy*

S. Toyoda, Y. Nakamura, K. Horiba, H. Kumigashira, M. Oshima, K. Amemiya

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We have investigated poly-Si gate pattern on HfO2/SiO 2/Si stack structures by scanning photoemission microscopy using synchrotron radiation. Gate-pattern images have been successfully obtained by scanning the sample position during acquisitions of core-level photoemission spectra. Si 2p, Hf 4f, and O 1s core-level spectra systematically change for different sample positions, which suggests that light source focused by the zone plate is effectively utilized for nano-scale characterization of chemical states in device-pattern structures. We have also demonstrated that etching velocities of HfO2 films on a Si substrate and shallow trench isolation vary when exposing the poly-Si gate pattern to dry etching processes.

本文言語English
ページ(範囲)224-227
ページ数4
ジャーナルe-Journal of Surface Science and Nanotechnology
9
DOI
出版ステータスPublished - 2011 5 21
外部発表はい

ASJC Scopus subject areas

  • バイオテクノロジー
  • バイオエンジニアリング
  • 凝縮系物理学
  • 材料力学
  • 表面および界面
  • 表面、皮膜および薄膜

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