TY - JOUR
T1 - Nano-fabrication of CDW and its negative resistance phenomenon
AU - Kubota, H.
AU - Sumita, T.
AU - Takami, S.
AU - Shinada, T.
AU - Ohdomari, I.
PY - 1999
Y1 - 1999
N2 - Nano-fabrication of CDW (nano-CDW) with sub 0.1 micrometer thick has been successfully formed by applying of focused-ion-beam to the one-dimensional conductor, molybdenum blue bronze (K0.3MoO3) crystal. The nano-CDW characteristically shows negative resistance above the threshold fields, which monotonously increased with decreasing temperature. The nano-fabrication is completed via two steps procedure. 1st: Hydrogen ion beam irradiation to the K0.3MoO3 crystal makes no-CDW layer by hydrogen atoms as excess-donar at 40-100 nm depth, where CDW at the surface of the crystal was isolated from the bulk side. 2nd: Scanning focused silicon ion beam makes amorphous MoO3 in line and space patterns, where CDW at the surface are isolated as real one-dimensional region. The one-dimensionality of electrons has been confirmed by negative magnetic resistance, which magnitude should be reduced with decreasing dimensionality.
AB - Nano-fabrication of CDW (nano-CDW) with sub 0.1 micrometer thick has been successfully formed by applying of focused-ion-beam to the one-dimensional conductor, molybdenum blue bronze (K0.3MoO3) crystal. The nano-CDW characteristically shows negative resistance above the threshold fields, which monotonously increased with decreasing temperature. The nano-fabrication is completed via two steps procedure. 1st: Hydrogen ion beam irradiation to the K0.3MoO3 crystal makes no-CDW layer by hydrogen atoms as excess-donar at 40-100 nm depth, where CDW at the surface of the crystal was isolated from the bulk side. 2nd: Scanning focused silicon ion beam makes amorphous MoO3 in line and space patterns, where CDW at the surface are isolated as real one-dimensional region. The one-dimensionality of electrons has been confirmed by negative magnetic resistance, which magnitude should be reduced with decreasing dimensionality.
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U2 - 10.1051/jp4:19991044
DO - 10.1051/jp4:19991044
M3 - Conference article
AN - SCOPUS:0033345643
VL - 9
SP - Pr10-175-Pr10-177
JO - European Physical Journal: Special Topics
JF - European Physical Journal: Special Topics
SN - 1951-6355
IS - 10
T2 - Proceedings of the 1999 International Workshop on ELectronic Crystals (ECRYS-99)
Y2 - 31 May 1999 through 5 June 1999
ER -