Mysterious material InN in nitride semiconductors - What's the bandgap energy and its application?

Takashi Matsuoka, Masashi Nakao

研究成果: Conference contribution

抄録

The progress in nitride semiconductors is reviewed. The current status in the growth and characteristics of InN, which remains the most mysterious compound, is reviewed. The phase diagram for InN growths the optical absorption characteristic, polarity, temperature dependence of photoluminescence, future prospects are described. The application of InN for light emitting devices is discussed.

本文言語English
ホスト出版物のタイトルIPRM'07
ホスト出版物のサブタイトルIEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
ページ372-375
ページ数4
DOI
出版ステータスPublished - 2007
イベントIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan
継続期間: 2007 5 142007 5 18

出版物シリーズ

名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(印刷版)1092-8669

Other

OtherIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
国/地域Japan
CityMatsue
Period07/5/1407/5/18

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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