Multiple-valued programmable logic array based on a resonant-tunneling diode model

Takahiro Hanyu, Yoshikazu Yabe, Michitaka Kameyama

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Toward the age of ultra-high-density digital ULSI systems, the development of new integrated circuits suitable for an ultimately fine geometry feature size will be an important issue. Resonant-tunneling (RT) diodes and transistors based on quantum effects in deep submicron geometry are such kinds of key devices in the next-generation ULSI systems. From this point of view, there has been recognized that RT functional devices with multiple peaks in the current-voltage (I-V) characteristic are inherently suitable for implementing multiple valued circuits such as a multiple-state memory cell.

本文言語English
ページ(範囲)1126-1132
ページ数7
ジャーナルIEICE Transactions on Electronics
E76-C
7
出版ステータスPublished - 1993 7月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

フィンガープリント

「Multiple-valued programmable logic array based on a resonant-tunneling diode model」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル