Toward the age of ultra-high-density digital ULSI systems, the development of new integrated circuits suitable for an ultimately fine geometry feature size will be an important issue. Resonant-tunneling (RT) diodes and transistors based on quantum effects in deep submicron geometry are such kinds of key devices in the next-generation ULSI systems. From this point of view, there has been recognized that RT functional devices with multiple peaks in the current-voltage (I-V) characteristic are inherently suitable for implementing multiple valued circuits such as a multiple-state memory cell.
|ジャーナル||IEICE Transactions on Electronics|
|出版ステータス||Published - 1993 7月 1|
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