A novel architecture for a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.
|ジャーナル||Proceedings of The International Symposium on Multiple-Valued Logic|
|出版ステータス||Published - 1996 1 1|
|イベント||Proceedings of the 1996 26th International Symposium on Multiple-Valued Logic - Santiago de Compostela, Spain|
継続期間: 1996 5 29 → 1996 5 31
ASJC Scopus subject areas
- コンピュータ サイエンス（全般）
- 数学 (全般)