Multiple-valued ferroelectric content-addressable memory

Ali Sheikholeslami, P. Glenn Gulak, Takahiro Hanyu

研究成果: Conference article査読

9 被引用数 (Scopus)

抄録

A novel architecture for a Multiple-Valued Ferroelectric Content-Addressable Memory (FCAM) is proposed. An FCAM employs ferroelectric capacitors as storage elements to provide a nonvolatile content-addressable memory. A 2-bit search operation is performed by a simultaneous access to a 4-level polarization, hence reducing the total number of search operations to half. Four FCAM structures are discussed in terms of their speed, area, and implementation feasibility.

本文言語English
ページ(範囲)74-79
ページ数6
ジャーナルProceedings of The International Symposium on Multiple-Valued Logic
出版ステータスPublished - 1996 1 1
外部発表はい
イベントProceedings of the 1996 26th International Symposium on Multiple-Valued Logic - Santiago de Compostela, Spain
継続期間: 1996 5 291996 5 31

ASJC Scopus subject areas

  • Computer Science(all)
  • Mathematics(all)

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