Multiple-valued content-addressable memory using metal-ferroelectric-semiconductor FETs

Takahiro Hanyu, Hiromitsu Kimura, Michitaka Kameyama

研究成果: Conference article査読

7 被引用数 (Scopus)

抄録

This paper presents a design of a non-volatile multiple-valued content-addressable memory (MVCAM) using metal-ferroelectric-semiconductor (MFS) FETs. An MFSFET is an important device with a non-destructive read scheme. Multiple-valued stored data are directly represented by remnant polarization states that correspond to threshold voltages of an MFSFET. Since one-digit comparison between multiple-valued input and stored data is performed by the combination of two different threshold operations, a one-digit comparator can be designed by two MFSFETs. The use of the one-digit comparator makers it possible to design a compact MVCAM cell. It is evaluated that the performance of the proposed MVCAM is superior to that of some binary and multiple-valued CAMs in terms of bit density, peripheral-circuit complexity, access speed, and functionality.

本文言語English
ページ(範囲)30-35
ページ数6
ジャーナルProceedings of The International Symposium on Multiple-Valued Logic
出版ステータスPublished - 1999 1 1
イベントProceedings of the 1999 29th International Symposium on Multiple-Valued Logic (ISMVL-99) - Freiburg im Breisgau, Ger
継続期間: 1999 5 201999 5 22

ASJC Scopus subject areas

  • 化学的な安全衛生
  • ハードウェアとアーキテクチャ
  • 安全性、リスク、信頼性、品質管理
  • 論理

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