Multiple graphene-layer-based heterostructures with van der Waals barrier layers for terahertz superluminescent and laser diodes with lateral/vertical current injection

V. Ryzhii, M. Ryzhii, T. Otsuji, V. E Karasik, V. Leiman, V. Mitin, M. S. Shur

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We analyze terahertz superluminescent and laser diodes using the injection pumping in the multiple graphene-layer (GL)/van der Waals barrier layers (BLs) heterostructures. The operation of such terahertz radiation sources is associated with the interband transitions in the gapless GLs under the population inversion leading to the GL negative dynamic conductivity. These devices use the lateral injection of holes and vertical injection of electrons. Such an injection might have advantages over the lateral injection of the bipolar carriers. Due to relatively large conduction band offsets at the GL-BL interface, the population inversion at the vertical injection can be markedly hampered by the injection current heating of the two-dimensional electron-hole plasma in the GLs. We show that doping GLs and/or BLs can substantially diminish the carrier heating promoting the interband population. Numerical analysis assumed the BL material parameters of MoS2 and WSe2 and showed the feasibility of such terahertz radiation sources.

本文言語English
論文番号085023
ジャーナルSemiconductor Science and Technology
35
8
DOI
出版ステータスPublished - 2020 8月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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