Multilayer indium saving ITO thin films produced by sputtering method

L. Voisin, M. Ohtsuka, S. Petrovska, R. Sergiienko, T. Nakamura

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Deposition of multilayer indium saving indium-tin oxide (ITO) thin films was attempted to achieve both low volume resistivity and high transmittance. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In2O3-10 mass % SnO2) and indium saving indium-tin oxide (In2O3-50 mass % SnO2) layer were grown by DC sputtering on glass substrates preheated at 523 K. It was found that this method can produce polycrystalline ITO thin films having volume resistivity as low as 281 μΩcm, mobility 28 cm2/V·s and carrier concentration 5.32 1020 cm−3. Average optical transmittances exhibited above 85% in visible range of spectrum. Arithmetical mean height (Sa) and root mean square height (Sq) of films deposited at optimum conditions were 1.09 and 1.40 nm, respectively.

本文言語English
論文番号154378
ジャーナルJournal of Alloys and Compounds
827
DOI
出版ステータスPublished - 2020 6 25

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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