MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

H. Yamanaka; K. Saito; K. Takanashi; H. Fujimori

MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

H. Yamanaka, K. Saito, K. Takanashi, H. Fujimori

研究成果: Conference article › 査読

抄録

In this study, tunneling junctions with a nonmagnetic metal (Cu) layer inserted between insulating barrier and ferromagnetic electrode were prepared to modify the magnon excitation. It was found that insertion of Cu diminished the bias voltage dependence of MR.

本文言語	English
ジャーナル	Digests of the Intermag Conference
出版ステータス	Published - 1999 12 1
外部発表	はい
イベント	Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea 継続期間: 1999 5 18 → 1999 5 21

ASJC Scopus subject areas

Electrical and Electronic Engineering

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引用スタイル

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title = "MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode",

abstract = "In this study, tunneling junctions with a nonmagnetic metal (Cu) layer inserted between insulating barrier and ferromagnetic electrode were prepared to modify the magnon excitation. It was found that insertion of Cu diminished the bias voltage dependence of MR.",

author = "H. Yamanaka and K. Saito and K. Takanashi and H. Fujimori",

year = "1999",

month = dec,

day = "1",

language = "English",

journal = "Digests of the Intermag Conference",

issn = "0074-6843",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' ; Conference date: 18-05-1999 Through 21-05-1999",

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TY - JOUR

T1 - MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

AU - Yamanaka, H.

AU - Saito, K.

AU - Takanashi, K.

AU - Fujimori, H.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - In this study, tunneling junctions with a nonmagnetic metal (Cu) layer inserted between insulating barrier and ferromagnetic electrode were prepared to modify the magnon excitation. It was found that insertion of Cu diminished the bias voltage dependence of MR.

AB - In this study, tunneling junctions with a nonmagnetic metal (Cu) layer inserted between insulating barrier and ferromagnetic electrode were prepared to modify the magnon excitation. It was found that insertion of Cu diminished the bias voltage dependence of MR.

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M3 - Conference article

AN - SCOPUS:0033299789

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

SN - 0074-6843

T2 - Proceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99'

Y2 - 18 May 1999 through 21 May 1999

ER -