MR behavior in tunneling junctions with a nonmagnetic metal layer between barrier and electrode

H. Yamanaka, K. Saito, K. Takanashi, H. Fujimori

研究成果: Conference article査読

抄録

In this study, tunneling junctions with a nonmagnetic metal (Cu) layer inserted between insulating barrier and ferromagnetic electrode were prepared to modify the magnon excitation. It was found that insertion of Cu diminished the bias voltage dependence of MR.

本文言語English
ジャーナルDigests of the Intermag Conference
出版ステータスPublished - 1999 12 1
外部発表はい
イベントProceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea
継続期間: 1999 5 181999 5 21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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