MOVPE growth of N-polar GaN/AlxGa1-xN/GaN heterostructure on small off-cut substrate for flat interface

K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, T. Matsuoka

研究成果: Conference contribution

抄録

The smooth surface of an N-polar GaN/AlxGa1-xN/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8� toward the a-plane. The 2DEG of an N-polar GaN/AlxGa1-xN/GaN heterostructure has been confirmed by Hall-effect measurement from 17 to 300 K. The sheet carrier concentration and the 2DEG mobility of this heterostructure were measured to be 1.4 � 1013 cm-2 and 1250 cm2/Vs at room temperature, respectively. The mobility monotonically increased with decreasing temperature and saturated at a value of 3050 cm2/Vs at 17 K. These values obtained in the primitive experimental show the potential of an N-polar GaN HEMT.

本文言語English
ホスト出版物のタイトル2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509019649
DOI
出版ステータスPublished - 2016 8 1
イベント2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
継続期間: 2016 6 262016 6 30

出版物シリーズ

名前2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other2016 Compound Semiconductor Week, CSW 2016
CountryJapan
CityToyama
Period16/6/2616/6/30

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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